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| IL255 Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, With Base Connection Features * * * * * * * AC or Polarity Insensitive Inputs Continuous Forward Current, 130 mA Built-in Reverse Polarity Input Protection Improved CTR Symmetry Industry Standard DIP Package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC i179010 A/C 1 C/A 2 NC 3 6B 5C 4E e3 Pb Pb-free Agency Approvals * UL1577, File No. E52744 System Code H or J, Double Protection * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 * BSI IEC60950 IEC60065 This optocoupler is ideal for applications requiring AC signal detection and monitoring. Order Information Part IL255 IL255-1 IL255-2 IL255-X007 IL255-X009 Remarks CTR > 20 %, DIP-6 CTR 20 - 80 %, DIP-6 CTR > 50 %, DIP-6 CTR > 20 %, SMD-6 (option 7) CTR > 20 %, SMD-6 (option 9) Applications Telecommunications Ring Detection Loop Current Detector For additional information on the available options refer to Option Information. Description The IL255 is a bidirectional input optically coupled isolator consisting of two high current GaAs infrared LEDs coupled to a silicon NPN phototransistor. The IL255 has a minimum CTR of 20 % Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Peak pulsed current Forward continuous current Power dissipation Derate linearly from 25 C Test condition 1.0 s, 300 pps Symbol IFP IF Pdiss Value 3.0 130 175 2.3 Unit A mA mW mW/C Document Number 83619 Rev. 1.6, 26-Oct-04 www.vishay.com 1 IL255 Vishay Semiconductors Output Parameter Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-base breakdown voltage Power dissipation Derate linearly from 25C Test condition Symbol BVCEO BVEBO BVCBO Pdiss Value 30 5.0 70 200 2.6 Unit V V V mW mW/C Coupler Parameter Isolation test voltage ( between emitter and detector, refer to standard climate 23 C/50 %RH, DIN 50014) Creepage Clearance Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Total dissipation Derate linearly from 25 C Storage temperature Operating temperature Lead soldering time at 260 C Tstg Tamb RIO RIO Ptot Test condition Symbol VISO Value 5300 Unit VRMS 7.0 7.0 1012 1011 250 3.3 - 55 to + 150 - 55 to + 100 10 mm mm mW mW/C C C sec. Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Test condition IF = 100 mA Symbol VF Min Typ. 1.4 Max 1.7 Unit V Output Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter leakage current Test condition IC = 10 mA IE = 10 A IC = 100 A IE = 100 A VCE = 10 V Symbol BVCEO BVECO BVCBO BVEBO ICEO Min 30 7.0 70 7.0 5.0 50 Typ. 50 10 Max Unit V V V V nA www.vishay.com 2 Document Number 83619 Rev. 1.6, 26-Oct-04 IL255 Vishay Semiconductors Coupler Parameter Collector-emitter saturation voltage Test condition IF = 10 mA, IC = 0.5 mA IF = 100 mA, IC = 1.0 mA IF = 16 mA, IC = 2.0 mA Part IL255 IL255-1 IL255-2 Symbol VCE(sat) VCE(sat) VCE(sat) 0.1 Min Typ. Max 0.4 0.2 0.4 Unit V V V Current Transfer Ratio Parameter Current Transfer Ratio Test condition IF = 10 mA, VCE = 10 V IF = 100 mA, VCE = 2.0 V IF = 10 mA, VCE = 10 V Current Transfer Ratio symmetry IF = 10 mA, VCE = 10 V Part IL255 IL255-1 IL255-2 IL255 IL255-1 IF = 10 mA, VCE = 10 V IL255-2 0.5 1.0 2.0 Symbol CTR CTR CTR Min 20 20 50 0.33 3.0 80 Typ. Max Unit % % % Typical Characteristics (Tamb = 25 C unless otherwise specified) PLED - LED Power - mW IF - LED Current - mA iIL255_01 VF -LED Forward Voltage -V iIL255_03 Ta - Ambient Temperature - C Figure 1. LED Forward Current vs.Forward Voltage Figure 3. Maximum LED Power Dissipation iIL255_02 CTRce - Current Transfer Ratio - % IF - LED Forward Current - mA Ta - Ambient Temperature - C iIL255_04 IF -LED Current -mA Figure 2. Maximum LED Current vs. Ambient Temperature Figure 4. Current Transfer Ratio vs. LED Current and CollectorEmitter Voltage Document Number 83619 Rev. 1.6, 26-Oct-04 www.vishay.com 3 IL255 Vishay Semiconductors Ta = 25 C Ice - Collector-emitter Current - mA Vce = 10 V - - Pulsed Operation -- DC Operation Vce = 0.4 V IF -LED Forward Current - mA iIL255_05 Figure 5. Non-Saturated and Saturated Collector Emitter Current vs. LED Current Ice - Collector-emitter Current - mA Vce = 10 V Vce = 0.4 V iIL255_06 Figure 6. Non-Saturated and Saturated Collector Emitter Current vs. LED Current Ice - Collector Emitter Current - mA IF=8 mA 12 10 8 6 4 2 0 0 0.2 0.4 0.6 1.0 1.4 IF=7 mA IF=6 mA IF=5 mA IF=4 mA IF=3 mA IF=2 mA IF=1 mA 1.8 2.2 Vce - Collector Emitter Voltage - V iIL255_07 Figure 7. Collector-Emitter Current vs. LED Collector-Emitter Voltage www.vishay.com 4 Document Number 83619 Rev. 1.6, 26-Oct-04 IL255 Vishay Semiconductors Package Dimensions in Inches (mm) pin one ID 3 .248 (6.30) .256 (6.50) 4 2 1 5 6 ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55) i178004 .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) .300 (7.62) typ. 18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81) .114 (2.90) .130 (3.0) Option 7 .300 (7.62) TYP . Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .331 (8.4) MIN. .406 (10.3) MAX. .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15 max. 18494 Document Number 83619 Rev. 1.6, 26-Oct-04 www.vishay.com 5 IL255 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 83619 Rev. 1.6, 26-Oct-04 |
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